METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND THE SEMICONDUCTOR DEVICE

• Main Authors: IZUMITANI JUNKO, TAKEWAKA HIROMOTO, KAMOSHIMA TAKAO
• Format: Patent
• Language: English
• Published: 06.12.2002
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To obtain a method of manufacturing a semiconductor device, which can suppress or avoid remaining abrasives in dents on the surface, after a CMP process. SOLUTION: After a titanium nitride film 5 is formed, a tungsten film 6 is formed on the whole surface. By setting the reaction temperature to around 430 deg.C, a seed layer about 100 nm thick is deposited by using WF6 : 50 sccm, SiH4 : 10 sccm and H2 : 1,000 sccm as the reaction gas in an atmosphere of Ar, N2 : 30 Torr. After that, the film around 300 nm thick is further deposited by using WF6 : 75 sccm and H2 : 500 sccm as the reaction gas in an atmosphere of Ar, N2 : 80 Torr. The tungsten film 6 has pillar-shaped grains 6a of fine diameters, such that the abrasives 50 used in the CMP process are difficult to adhere between the grains. Specifically, the tungsten film 6 has grains 6a possessing diameters of about 10-20 nm.