METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To realize streamlining of manufacturing processes in terms of cost and time by omitting a mirror polishing process by a chemical-mechanical polishing(CMP) method for a product, such as transistor for horizontal-deflection output or the like, for which strict wafer characterist...

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Bibliographic Details
Main Authors TSUCHIYA TAKAFUMI, SAITO TAKENAO
Format Patent
LanguageEnglish
Published 22.11.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
DRESSING OR CONDITIONING OF ABRADING SURFACES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
PERFORMING OPERATIONS
POLISHING
SEMICONDUCTOR DEVICES
TRANSPORTING
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Summary:PROBLEM TO BE SOLVED: To realize streamlining of manufacturing processes in terms of cost and time by omitting a mirror polishing process by a chemical-mechanical polishing(CMP) method for a product, such as transistor for horizontal-deflection output or the like, for which strict wafer characteristics are not required. SOLUTION: The wafer is ground half-off and is simultaneously subjected to a half-mirror polishing under the grinding condition, to keep the work-strain layer to be 0.2 μm or shallower. By initially forming a thermal oxide film in forming the device, silicon is consumed to eliminate the work-strain layer. By adopting this method for a wafer for which not so strict characteristics are required as a user's demand, wastage can be eliminated in time terms of and cost, to realize streamlining of the manufacturing processes.
Bibliography:Application Number: JP20010140045