METHOD AND DEVICE FOR FORMING METAL OXIDE THIN FILM

• Main Authors: KIYOTOSHI MASAHIRO, NAKAHIRA JUNYA, EGUCHI KAZUHIRO, NAKABAYASHI MASAAKI, YAMAZAKI SOICHI
• Format: Patent
• Language: English
• Published: 18.10.2002
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To make a film thinner by preventing deviation of a composition ratio in the vicinity of an interface with a noble metal film from a stoichiometric ratio, when a metal oxide thin film is formed by MOCVD, in which a raw material is supplied onto a noble metal electrode by a liquid-phase supplying method. SOLUTION: This film-forming apparatus includes a vaporizer 107 for generating a gas by vaporizing a solution obtained, by dissolving a metal organic compound or metal organic complex compound in an organic solvent, a furnace 108 in which the gas generated in the vaporizer 107 and an oxidizing agent are mixed and at least part of the organic solvent in the gas is decomposed by a heating mechanism, and a reaction chamber 102, into which the gas is supplied from the furnace 108 and in which a film is formed on a film-formed substrate 110 set inside by a chemical vapor growth method.