SEMICONDUCTOR POWER CONVERTER
PROBLEM TO BE SOLVED: To minimize increase of loss and prevent application of a over-voltage to a collector without vibration of collector voltage of IGBT. SOLUTION: The semiconductor power converter comprises an IGBT, a capacitor connected between the collector and gate of IGBT and arms of which ga...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
27.09.2002
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To minimize increase of loss and prevent application of a over-voltage to a collector without vibration of collector voltage of IGBT. SOLUTION: The semiconductor power converter comprises an IGBT, a capacitor connected between the collector and gate of IGBT and arms of which gate circuit for controlling the switching of the IGBT is connected to the gate of the IGBT. A plurality of serially connected arms are connected in parallel and the neutral point of the serially connected arms is connected to the load. Thereby, an impedance among the gate of IGBT, terminal and gate circuit is reduced when the gate voltage is higher than the gate voltage command value or an impedance between the gate and emitter is reduced when the collector voltage is high in order to quickly discharge the gate. |
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Bibliography: | Application Number: JP20010077432 |