SEED CRYSTAL FOR PULLING SINGLE CRYSTAL, POYCRYSTALLINE RAW MATERIAL FOR PULLING SINGLE CRYSTAL, METHOD OF SUPPLYING POLYCRYSTALLINE RAW MATERIAL FOR PULLING SINGLE CRYSTAL, AND SINGLE CRYSTAL PULLING METHOD

• Main Authors: KABURARUMA TATSUYA, MANIWA SATORU, KUBO TAKAYUKI, INOUE KUNIHARU
• Format: Patent
• Language: English
• Published: 11.09.2002
• Edition: 7
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To increase the productivity of a single crystal in a recharge method. SOLUTION: A rod-like polycrystalline raw material 20 is supplied into a crucible 30 in such a way that the polycrystalline raw material 20 is held by a seed crystal 10. A hooking part 14 for hanging and supporting the rod-like polycrystalline raw material 20 is formed at a position higher than the lower end part of the seed crystal 10. A groove 21 to be engaged with the hooking part 14 of the seed crystal 10 is formed at the end surface of the polycrystalline raw material 20 so as to perforate in the radial direction. The polycrystalline raw material 20 is melted up to a lower part of the groove 21 in such a manner that the hooking part 14 of the seed crystal 10 is not melted. The residual part of the polycrystalline raw material 20 is divided at the groove 21 and naturally falls down in a melt 31 of the raw material in the crucible 30. After whole amount of the polycrystalline raw material 20 has been dissolved, the part 15 lower than the hooking part 14 of the seed crystal 10 is immersed into the melt 31 of the raw material and then pulling of a single crystal is started.