SEMICONDUCTOR POWER CONVERTER

PROBLEM TO BE SOLVED: To provide a drive circuit for an IGBT(Insulated Gate Bipolar Transistor) that solves a problem of disabled gate control by a large gate current at a high-speed in the case of switching gate resistors by an analog switch. SOLUTION: Analog switches S1-S3 are used to select gate...

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Bibliographic Details
Main Author ICHIHARA AKIFUMI
Format Patent
LanguageEnglish
Published 12.07.2002
Edition7
Subjects
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Summary:PROBLEM TO BE SOLVED: To provide a drive circuit for an IGBT(Insulated Gate Bipolar Transistor) that solves a problem of disabled gate control by a large gate current at a high-speed in the case of switching gate resistors by an analog switch. SOLUTION: Analog switches S1-S3 are used to select gate resistors RG1-RG3, a gate voltage is simulated with the selected gate resistor and a capacitor C1 simulating a gate capacitance, the gate voltage is applied to a current amplifier AMP, where current amplification is conducted and a charging/discharging voltage across a capacitor C2 provides a gate voltage of the IGBT. This method also includes the selection of the capacitors C1 in parallel with the switching of the gate resistors.
Bibliography:Application Number: JP20000391819