PATTERN FORMING METHOD
PROBLEM TO BE SOLVED: To obtain a good pattern shape when a resist pattern is formed by carrying out pattern exposure using light of 1 nm band to 180 nm band as light for exposure. SOLUTION: A chemical amplification type resist material containing a base resin to which a fluorine atom has been added...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
26.06.2002
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To obtain a good pattern shape when a resist pattern is formed by carrying out pattern exposure using light of 1 nm band to 180 nm band as light for exposure. SOLUTION: A chemical amplification type resist material containing a base resin to which a fluorine atom has been added as an atom having an absorption wavelength peak and shifting the peak to the longer wavelength side is applied on a semiconductor substrate 10 to form a resist film 11. This resist film 11 is irradiated with F2 laser light 13 through a mask 12 and pattern exposure is carried out and the resist film 11 subjected to pattern exposure is developed to form the objective resist pattern 14. |
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Bibliography: | Application Number: JP20010315598 |