PATTERN FORMING METHOD

PROBLEM TO BE SOLVED: To obtain a good pattern shape when a resist pattern is formed by carrying out pattern exposure using light of 1 nm band to 180 nm band as light for exposure. SOLUTION: A chemical amplification type resist material containing a base resin to which a fluorine atom has been added...

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Bibliographic Details
Main Authors SASAKO MASARU, KATSUYAMA AKIKO, KISHIMURA SHINJI
Format Patent
LanguageEnglish
Published 26.06.2002
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To obtain a good pattern shape when a resist pattern is formed by carrying out pattern exposure using light of 1 nm band to 180 nm band as light for exposure. SOLUTION: A chemical amplification type resist material containing a base resin to which a fluorine atom has been added as an atom having an absorption wavelength peak and shifting the peak to the longer wavelength side is applied on a semiconductor substrate 10 to form a resist film 11. This resist film 11 is irradiated with F2 laser light 13 through a mask 12 and pattern exposure is carried out and the resist film 11 subjected to pattern exposure is developed to form the objective resist pattern 14.
Bibliography:Application Number: JP20010315598