METHOD AND APPARATUS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL

• Main Authors: HARA KAZUTO, ONDA SHOICHI, NAGAKUBO MASAO
• Format: Patent
• Language: English
• Published: 28.05.2002
• Edition: 7
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a method and an apparatus for producing a silicon carbide single crystal, by which clogging caused by a gaseous mixture can be prevented. SOLUTION: A crucible 30 constituted of a first member 31 and a second cylindrical member 36 is arranged in a lower vessel 2. A pedestal 33 is arranged at the inner side of the first member 31, and a seed crystal 34 is attached to the pedestal 33. Further, a second heat insulating member 52 is provided between an introducing piping 50 and the crucible 30, and a first heat insulating member 51 is provided on the way of the introducing piping 50. A temperature gradient such that the temperature becomes higher toward the crucible 30 is provided in the introducing piping 50. The SiC single crystal is formed on the seed crystal 34 while introducing the gaseous mixture into the crucible 30 from the lower part of the introducing piping 50.