Bi-Te SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR

PROBLEM TO BE SOLVED: To provide a Bi-Te semiconductor element which is low-cost, rigid, and high-reliability where plating process to a Bi-Te semiconductor is omitted, while the Bi-Te semiconductor is directly jointed to a solder. SOLUTION: Electrodes (2 and 4) are jointed to a Bi-Te semiconductor...

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Bibliographic Details
Main Authors KAYAMOTO TAKASHI, TAGUCHI KOHEI, MATSUMOTO ATSUO, KOSHIGOE BIEI
Format Patent
LanguageEnglish
Published 10.05.2002
Edition7
Subjects
CLADDING OR PLATING BY SOLDERING OR WELDING
CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING
ELECTRICITY
MACHINE TOOLS
METAL-WORKING NOT OTHERWISE PROVIDED FOR
PERFORMING OPERATIONS
SOLDERING OR UNSOLDERING
TRANSPORTING
WELDING
WORKING BY LASER BEAM
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Summary:PROBLEM TO BE SOLVED: To provide a Bi-Te semiconductor element which is low-cost, rigid, and high-reliability where plating process to a Bi-Te semiconductor is omitted, while the Bi-Te semiconductor is directly jointed to a solder. SOLUTION: Electrodes (2 and 4) are jointed to a Bi-Te semiconductor (3) via a solder layer. Related to the Bi-Te semiconductor (3), an internal oxygen concentration is 10% or lower, before the solder layer is formed, and it is preferred that surface oxygen concentration be 70% or less, and that Te/Bi atomic concentration ratio at surface be higher than inside, with the Te/Bi atomic concentration ratio at the surface be equal to 1 or higher.
Bibliography:Application Number: JP20000319538