SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device such as a high-breakdown-voltage IC that is capable of a high breakdown voltage, inhibits chip costs, and has high-breakdown-voltage junction terminator structure for securing long-term reliability. SOLUTION: A strip of thin-film layer 4 is for...

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Bibliographic Details
Main Authors JINBO SHINICHI, SAITO JUN
Format Patent
LanguageEnglish
Published 19.04.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor device such as a high-breakdown-voltage IC that is capable of a high breakdown voltage, inhibits chip costs, and has high-breakdown-voltage junction terminator structure for securing long-term reliability. SOLUTION: A strip of thin-film layer 4 is formed at the upper section of the high-breakdown-voltage junction terminator structure for potentially separating the section between first and second reference circuit formation regions 1 and 2. A Zener diode formed in the thin-film layer 4 is formed by a curved section B comprising a place where a high-breakdown voltage NMOS 5, PMOS 6 are provided and a corner place, and a straight section C being in parallel with the end section of the reference circuit formation regions 1 and 2, thus making potential distribution uniform.
Bibliography:Application Number: JP20000306206