DRY CHEMICAL MECHANICAL POLISHING METHOD

PROBLEM TO BE SOLVED: To efficiently carry out etching. SOLUTION: In this method for planarizing a surface of a sample to be polished, the surface of the sample 107 held in a sample base 114 is brought into contact with a polishing pad 119 while supplying a plasma 106 from a plasma source, and polis...

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Bibliographic Details
Main Authors TAJI SHINICHI, YAMAMOTO SEIJI, YOKOGAWA KATANOBU
Format Patent
LanguageEnglish
Published 09.04.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
DRESSING OR CONDITIONING OF ABRADING SURFACES
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
PERFORMING OPERATIONS
POLISHING
SEMICONDUCTOR DEVICES
TRANSPORTING
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Summary:PROBLEM TO BE SOLVED: To efficiently carry out etching. SOLUTION: In this method for planarizing a surface of a sample to be polished, the surface of the sample 107 held in a sample base 114 is brought into contact with a polishing pad 119 while supplying a plasma 106 from a plasma source, and polishing is carried out by moving a relative position between the sample 107 and a polishing tool 119. The dry chemical mechanical polishing method is constituted such that, at polishing, a diameter of the sample 107 is made larger than that of the polishing tool 119 thereby exposing at least a part of the surface of the sample to an atmosphere of the plasma 106.
Bibliography:Application Number: JP20000299105