SUBSTRATE PROCESSOR

PROBLEM TO BE SOLVED: To provide a wafer processor capable of easily and accurately detecting various wafer surface states such as film thickness without stopping conveying or processing while conveying or processing a wafer not to lower a throughput. SOLUTION: In the wafer processor for conveying o...

Full description

Saved in:
Bibliographic Details
Main Authors KUNISAWA JUNJI, MATSUDA TETSURO, MAKINO NATSUKI, KIMURA NORIO, MISHIMA KOJI, KANEKO HISAFUMI
Format Patent
LanguageEnglish
Published 22.02.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PROBLEM TO BE SOLVED: To provide a wafer processor capable of easily and accurately detecting various wafer surface states such as film thickness without stopping conveying or processing while conveying or processing a wafer not to lower a throughput. SOLUTION: In the wafer processor for conveying or processing a wafer W in the state of holding the wafer W with a robot hand 40 while having the robot hand 40 for holding the wafer W, the robot hand 40 is provided with a sensor S for measuring the film thickness of the wafer W and on the basis of a signal detected by this sensor S while conveying or processing the wafer W, the film thickness of the wafer W is measured. Thus, the metal film thickness of the wafer W can be measured without stopping/interrupting a wafer processing process and while providing a high throughput, the film thickness can be made constant.
Bibliography:Application Number: JP20000244355