PLATING METHOD, PLATING STRUCTURE, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

• Main Authors: SEGAWA YUJI, KOMAI HISANORI, YUBI HIROSHI
• Format: Patent
• Language: English
• Published: 19.02.2002
• Edition: 7
• Subjects: APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROFORMING; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a plating method and a plating structure by which good buring excellent in adhesive properties and adhesive strength can be performed into wiring grooves and connecting holes formed on a substrate in semiconductor device and to provide a method for producing semiconductor device, and a semiconductor device. SOLUTION: A first seed layer 25 is formed on a barrier layer 24 in an electroless plating solution by the electroplating of copper, and successively, the electroplating of copper is continuously performed as a substrate is dipped into the electroless plating solution, by which the first seed layer 25 functions as a catalytic layer to form a second seed layer 26 thereon, and further, copper is burried into a recessed part 23 by electroless plating or electroplating. As a result, a plating layer high in adhesive properties and adhesive strength between metals can be formed without requiring the catalyzing treatment of electroless plating, a step coverage satisfactory even to a high aspect ratio can be obtained, and the generation of voids can be suppressed.