ITO FILM, AND FILM DEPOSITION METHOD THEREOF

• Main Authors: SAKAMI TOSHIYUKI, CHIKUGO RYOJI
• Format: Patent
• Language: English
• Published: 15.02.2002
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CABLES; CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CONDUCTORS; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GLASS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INSULATORS; JOINING GLASS TO GLASS OR OTHER MATERIALS; METALLURGY; MINERAL OR SLAG WOOL; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide an ITO film having a surface roughness (Ra) of <=1 nm without any new manufacturing step such as a polishing step. SOLUTION: This ITO film is manufactured by an ion plating method using a film deposition apparatus comprising a plasma beam generation source and a hearth disposed in a vacuum container and having an incident surface of the plasma beam in which a consistent magnetic field is formed by an annular permanent magnet disposed in the vicinity of the hearth in a concentric manner with the axis of the hearth, the adjusted magnetic field on the consistent magnetic field by an electromagnetic coil disposed concentric with the axis of the hearth to change the magnetic field in the vicinity of the hearth, the plasma beam from the plasma beam generation source is led to an evaporation material for depositing the ITO film to deposit the ITO film, and characterized in that the specific resistance is <=4 μΩm, and the mean surface roughness (Ra) is <=1 nm.