SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To achieve a semiconductor device having an anti-fuse element with a high program yield. SOLUTION: The anti-fuse film between a lower electrode 13, made of TiN and an upper electrode 17, is set to three-layer structure, a second layer anti-fuse film 15 is formed by amorphous Si...

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Bibliographic Details
Main Author TERAI YUKA
Format Patent
LanguageEnglish
Published 31.01.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To achieve a semiconductor device having an anti-fuse element with a high program yield. SOLUTION: The anti-fuse film between a lower electrode 13, made of TiN and an upper electrode 17, is set to three-layer structure, a second layer anti-fuse film 15 is formed by amorphous Si, and a TiWn or an SiN film having high adhesion with the lower electrode 13 is used in a first layer anti-fuse film 14. The TiWn or SiN film, having high adhesion with the upper electrode 17, is used in a third layer anti-fuse film 16. By setting the anti-fuse films to the three-structure, adhesion between electrodes 13 and 17 and anti-fuse films (14, 15, and 16) is improved. A program voltage is applied to both the electrodes 13 and 17, for allowing an electrode material to easily react to the anti-fuse film for reliable continuity and programming.
Bibliography:Application Number: JP20000213713