METHOD FOR FORMING INSULATION REGION

PROBLEM TO BE SOLVED: To provide a method for forming an insulation region in a periphery of an active region of a semiconductor substrate. SOLUTION: In a method for forming an insulation region (14) in a periphery of an active region (12) of a semiconductor substrate (10), this method contains the...

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Main Authors LUNENBORG MEINDERT MARTIN, ZULIAN DOMINIQUE CECILE, INARD ALAIN, OBERLIN JEAN-CLAUDE, LEVY DIDIER, DE COSTER WALTER JAN AUGUST
Format Patent
LanguageEnglish
Published 16.11.2001
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a method for forming an insulation region in a periphery of an active region of a semiconductor substrate. SOLUTION: In a method for forming an insulation region (14) in a periphery of an active region (12) of a semiconductor substrate (10), this method contains the step that a trench is formed in a periphery of the active region (12) in the substrate, and the trench is filled up with a first material, and the insulation region (14) projecting from the surface of the substrate in the periphery of the active region is formed as a vertical projection in its margin. In the margin of the active region, an angle of the projection of the insulation region is gotten dull. A semiconductor device is formed by use of the above method.
Bibliography:Application Number: JP20010081064