SEMICONDUCTOR SURGE PROTECTION ELEMENT AND METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC CIRCUIT USING THE SAME

PROBLEM TO BE SOLVED: To manufacture a semiconductor surge protection element which is produced by processing both surfaces of a wafer conventionally by a simpler wafer process to achieve a higher element yield at lower cost. SOLUTION: A first n-type ZnO polycrystalline layer, an epitaxial insulatin...

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Bibliographic Details
Main Author YASUMURA KENJI
Format Patent
LanguageEnglish
Published 02.11.2001
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To manufacture a semiconductor surge protection element which is produced by processing both surfaces of a wafer conventionally by a simpler wafer process to achieve a higher element yield at lower cost. SOLUTION: A first n-type ZnO polycrystalline layer, an epitaxial insulating layer and a second n-type ZnO polycrystalline layer are formed on a first electrode by an epitaxial growth method. Then, a second electrode is further provided to manufacture a semiconductor surge protection element. Such an element does not require processing of both surfaces of a wafer. When an overvoltage is applied between the two electrodes, a current flows in the epitaxial insulating layer by tunneling.
Bibliography:Application Number: JP20000125668