PATTERN FORMING MATERIAL AND PATTERN FORMING METHOD

PROBLEM TO BE SOLVED: To obtain a resist pattern having a good pattern shape while hardly generating the scum when a resist pattern is formed with light for exposure having a wavelength of 1 nm band to 30 nm band or 110 nm band to 180 nm band. SOLUTION: The objective pattern forming material has a b...

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Bibliographic Details
Main Authors SASAKO MASARU, UEDA MITSURU, KISHIMURA SHINJI
Format Patent
LanguageEnglish
Published 02.11.2001
Edition7
Subjects
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Summary:PROBLEM TO BE SOLVED: To obtain a resist pattern having a good pattern shape while hardly generating the scum when a resist pattern is formed with light for exposure having a wavelength of 1 nm band to 30 nm band or 110 nm band to 180 nm band. SOLUTION: The objective pattern forming material has a base resin containing a siloxane compound of formula (1) (where plural symbols R1 are the same or different and are each an alkyl compound, an ester compound, an ether compound, a sulfone compound, a sulfonyl compound or an aromatic compound).
Bibliography:Application Number: JP20000117688