PATTERN FORMING MATERIAL AND PATTERN FORMING METHOD
PROBLEM TO BE SOLVED: To obtain a resist pattern having a good pattern shape while hardly generating the scum when a resist pattern is formed with light for exposure having a wavelength of 1 nm band to 30 nm band or 110 nm band to 180 nm band. SOLUTION: The objective pattern forming material has a b...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
02.11.2001
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To obtain a resist pattern having a good pattern shape while hardly generating the scum when a resist pattern is formed with light for exposure having a wavelength of 1 nm band to 30 nm band or 110 nm band to 180 nm band. SOLUTION: The objective pattern forming material has a base resin containing a siloxane compound of formula (1) (where plural symbols R1 are the same or different and are each an alkyl compound, an ester compound, an ether compound, a sulfone compound, a sulfonyl compound or an aromatic compound). |
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Bibliography: | Application Number: JP20000117688 |