PATTERN FORMING MATERIAL AND PATTERN FORMING METHOD
PROBLEM TO BE SOLVED: To obtain a good pattern shape when a resist pattern is formed by using light for exposure having a wavelength of 1 nm band to 30 nm band or 110 nm band to 180 nm band. SOLUTION: A pattern forming material with a polymer containing a 1st unit of formula (1) and a 2nd unit of fo...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
28.09.2001
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To obtain a good pattern shape when a resist pattern is formed by using light for exposure having a wavelength of 1 nm band to 30 nm band or 110 nm band to 180 nm band. SOLUTION: A pattern forming material with a polymer containing a 1st unit of formula (1) and a 2nd unit of formula (2) and an aci9d generating agent is applied on a substrate to form a resist film. In the formulae, R1 and R2 are the same or different and are each alkyl, Cl or Cl-containing alkyl and R3 is a protective group which is released by an acid. The resist film is patternwise exposed by irradiation with light for exposure having a wavelength of 1 nm band to 30 nm band or 110 nm band to 180 nm band and the patternwise exposed resist film is developed to form the objective resist pattern. |
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Bibliography: | Application Number: JP20000070931 |