PATTERN FORMING MATERIAL AND PATTERN FORMING METHOD

PROBLEM TO BE SOLVED: To obtain a good pattern shape when a resist pattern is formed by using light for exposure having a wavelength of 1 nm band to 30 nm band or 110 nm band to 180 nm band. SOLUTION: A pattern forming material with a polymer containing a 1st unit of formula (1) and a 2nd unit of fo...

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Bibliographic Details
Main Authors SASAKO MASARU, SHIRAI MASAMITSU, KISHIMURA SHINJI, KADOOKA MASAHIRO
Format Patent
LanguageEnglish
Published 28.09.2001
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To obtain a good pattern shape when a resist pattern is formed by using light for exposure having a wavelength of 1 nm band to 30 nm band or 110 nm band to 180 nm band. SOLUTION: A pattern forming material with a polymer containing a 1st unit of formula (1) and a 2nd unit of formula (2) and an aci9d generating agent is applied on a substrate to form a resist film. In the formulae, R1 and R2 are the same or different and are each alkyl, Cl or Cl-containing alkyl and R3 is a protective group which is released by an acid. The resist film is patternwise exposed by irradiation with light for exposure having a wavelength of 1 nm band to 30 nm band or 110 nm band to 180 nm band and the patternwise exposed resist film is developed to form the objective resist pattern.
Bibliography:Application Number: JP20000070931