ECR SPUTTER FILM FORMING APPARATUS

• Main Authors: NAKATSU OSAMU, ISHII TOMOKO
• Format: Patent
• Language: English
• Published: 14.09.2001
• Edition: 7
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INFORMATION STORAGE; INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PHYSICS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide an ECR sputter film forming apparatus which can form a film of a uniform thickness on a plate. SOLUTION: The film is formed by oscillating an ECR sputter source S having a target, a coil and a plasma chamber so that the central axis 7a of the target follows a circumference L having a predetermined radius from a center of an HD substrate 1. As a result, the film thickness on a circumferential portion of the substrate 1 can be substantially same as that on a center portion, and the film thickness distribution can be uniform.