PATTERN FORMATION METHOD AND ELECTRON BEAM EXPOSURE SYSTEM

PROBLEM TO BE SOLVED: To improve the dimensional precision of pattern in electron beam lithography. SOLUTION: After obtaining a relation between the time of exposing a resist film is a vacuum and the sensitivity of the resist film, a test exposure using an electron beam is conducted for a resist fil...

Full description

Saved in:
Bibliographic Details
Main Author KATSUYAMA AKIKO
Format Patent
LanguageEnglish
Published 24.08.2001
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PROBLEM TO BE SOLVED: To improve the dimensional precision of pattern in electron beam lithography. SOLUTION: After obtaining a relation between the time of exposing a resist film is a vacuum and the sensitivity of the resist film, a test exposure using an electron beam is conducted for a resist film for testing to find out the quantity of the exposed electron beam used for pattern exposure. Then, on the basis of the relation between the time for exposing the resist film in a vacuum and the sensitivity of the resist film, the time in which the resist film for testing is exposed in a vacuum during test exposure, and the estimated value of the time the resist film to be exposed for patterning is exposed in a vacuum, the quantity of exposure obtained from test exposure is corrected. An electron beam 3 of the corrected quantity of exposure is emitted to a resist film 2 formed on a semiconductor substrate 1 for pattern exposure, and the resist film 2 is developed to form a resist pattern 4.
Bibliography:Application Number: JP20000034576