SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

PROBLEM TO BE SOLVED: To suppress a property variation caused by contamination or damage and to improve a reliability by protecting a surface which is in a sensitive state caused by a low impurity concentration of a diffusion layer of an IIL which corresponds to a base region of a PNP bipolar transi...

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Bibliographic Details
Main Author EJIRI YOICHI
Format Patent
LanguageEnglish
Published 10.08.2001
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To suppress a property variation caused by contamination or damage and to improve a reliability by protecting a surface which is in a sensitive state caused by a low impurity concentration of a diffusion layer of an IIL which corresponds to a base region of a PNP bipolar transistor. SOLUTION: A semiconductor device, which is provided with an integrated injection logic (IIL1) formed on a semiconductor substrate 11 and has the PNP bipolar transistor construction, has a layer at least of insulating films 17 formed on the base region 20 of the PNP bipolar transistor structure being made of a silicon film 16.
Bibliography:Application Number: JP20000028531