SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREFOR

• Main Authors: MARUTA HIDEAKI, TANABE TETSUHIRO, NAKAHARA TAKESHI, KITAJIMA HISAYOSHI
• Format: Patent
• Language: English
• Published: 06.07.2001
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

PROBLEM TO BE SOLVED: To provide a semiconductor laser of the structure capable of accurately forming the position of a current block layer in the structure for forming a DH laminate of a triangular shape of a sectional shape on the ridge of a semiconductor substrate, and suppressing the leakage current as much as possible. SOLUTION: An n-type etching stop layer 2 is provided on an n-type semiconductor substrate 1, and an n-type stripe-like ridge layer 3 is formed partly in the stop layer 2. The stripe-like side face of the layer 3 is formed so as to completely expose the surface B in plane (111) to the bottom; Thus, the growth of the double hetero structure laminate 12 grown thereon is slightly grown at its side face and formed so that the semiconductor layers of the embedded layer 12a laminated on the ridge recess (exposed etching stop layer 2) almost contact the sidewall of the layer 3.