METHOD OF ECR PROTECTIVE FILM DEPOSITION, AND ECR FILM DEPOSITION SYSTEM
PROBLEM TO BE SOLVED: To provide an ECR(electron coupling resonance) film deposition system capable of forming a protective film by means of ECR sputtering and ECR plasma enhanced CVD selectively or simultaneously. SOLUTION: In a reaction chamber 10, a substrate S is provided in such a way that bias...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
03.07.2001
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide an ECR(electron coupling resonance) film deposition system capable of forming a protective film by means of ECR sputtering and ECR plasma enhanced CVD selectively or simultaneously. SOLUTION: In a reaction chamber 10, a substrate S is provided in such a way that bias voltage by a bias power source 11 can be applied to it and also a sputtering target 20 is disposed in close vicinity to a plasma window 12a. A material gas for CVD film deposition and a material gas for sputtering film deposition can be supplied into a plasma chamber 12 by gas feeding deices 14A and 14B, respectively. As a result, an ECR protective film using only the material gas for CVD film deposition or only the material gas for sputtering film deposition can be formed, and further, a protective film having properties intermediate between the properties of the ECR plasma enhanced CVD protective film and those of the ECR sputtering protective film can also be formed. |
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Bibliography: | Application Number: JP19990367335 |