METHOD OF ECR PROTECTIVE FILM DEPOSITION, AND ECR FILM DEPOSITION SYSTEM

• Main Authors: NAKATSU OSAMU, TAKAMI YOSHIO
• Format: Patent
• Language: English
• Published: 03.07.2001
• Edition: 7
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INFORMATION STORAGE; INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PHYSICS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide an ECR(electron coupling resonance) film deposition system capable of forming a protective film by means of ECR sputtering and ECR plasma enhanced CVD selectively or simultaneously. SOLUTION: In a reaction chamber 10, a substrate S is provided in such a way that bias voltage by a bias power source 11 can be applied to it and also a sputtering target 20 is disposed in close vicinity to a plasma window 12a. A material gas for CVD film deposition and a material gas for sputtering film deposition can be supplied into a plasma chamber 12 by gas feeding deices 14A and 14B, respectively. As a result, an ECR protective film using only the material gas for CVD film deposition or only the material gas for sputtering film deposition can be formed, and further, a protective film having properties intermediate between the properties of the ECR plasma enhanced CVD protective film and those of the ECR sputtering protective film can also be formed.