SEMICONDUCTOR INTEGRATED CIRCUIT AND ACTIVE MATRIX DISPLAY DEVICE

PROBLEM TO BE SOLVED: To provide an integrated circuit equipped with a large number of thin film transistors which are optimal in properties and formed on the same substrate. SOLUTION: A large number of N-channel and P-channel thin film transistors are formed on the same substrate, a low-concentrati...

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Bibliographic Details
Main Authors TAKEMURA YASUHIKO, YAMAMOTO MUTSUO, CHO KOYU, HIROKI MASAAKI, KONUMA TOSHIMITSU
Format Patent
LanguageEnglish
Published 29.06.2001
Edition7
Subjects
ADVERTISING
BASIC ELECTRIC ELEMENTS
CRYPTOGRAPHY
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING
DISPLAY
DISPLAYING
EDUCATION
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FREQUENCY-CHANGING
LABELS OR NAME-PLATES
NON-LINEAR OPTICS
OPTICAL ANALOGUE/DIGITAL CONVERTERS
OPTICAL LOGIC ELEMENTS
OPTICS
PHYSICS
PICTORIAL COMMUNICATION, e.g. TELEVISION
SEALS
SEMICONDUCTOR DEVICES
SIGNS
TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Summary:PROBLEM TO BE SOLVED: To provide an integrated circuit equipped with a large number of thin film transistors which are optimal in properties and formed on the same substrate. SOLUTION: A large number of N-channel and P-channel thin film transistors are formed on the same substrate, a low-concentration impurity region is provided to the N-channel thin film transistor, and a low-concentration impurity region is not provided to the semiconductor film of the P-channel thin film transistor, by which an integrated circuit can be formed of thin film transistors of optimal properties.
Bibliography:Application Number: JP20000301686