POSITIVE PHOTORESIST COMPOSITION
PROBLEM TO BE SOLVED: To provide a positive photoresist composition having high sensitivity and high resolving power and giving a photoresist having a rectangular shape and to provide a polysiloxane less liable to cause a size shift in pattern transfer to a lower layer in an oxygen plasma etching st...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
29.06.2001
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide a positive photoresist composition having high sensitivity and high resolving power and giving a photoresist having a rectangular shape and to provide a polysiloxane less liable to cause a size shift in pattern transfer to a lower layer in an oxygen plasma etching step and capable of imparting excellent characteristics to a positive photoresist composition. SOLUTION: The positive photoresist composition contains at least an alkali- soluble polysiloxane having a structural unit of formula I, e.g. formula II and contains, in principle, the polysiloxane, a compound which is decomposed by exposure to form an acid and a phenolic compound in which phenolic hydroxyl groups contained in its molecule have been partially or wholly protected with acid decomposable groups. The composition may contain an aromatic or aliphatic carboxylic acid compound in which carboxyl groups contained in its molecule have been partially or wholly protected with acid decomposable groups. |
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Bibliography: | Application Number: JP19990354710 |