ANALOG SWITCH INCLUDING TWO COMPLEMENTARY MOS ELECTRIC FIELD EFFECT TRANSISTORS

• Main Author: STEINHAGEN WOLFGANG
• Format: Patent
• Language: English
• Published: 22.06.2001
• Edition: 7
• Subjects: BASIC ELECTRONIC CIRCUITRY; ELECTRICITY; PULSE TECHNIQUE

PROBLEM TO BE SOLVED: To produce an analog switch where a leaked current at the time of off can be neglected, by reliably turning on and off even in the case of low power source voltage. SOLUTION: The source-drain circuits of two complementary MOS electric field effect transistors 10 and 12 are arranged in parallel between input and output terminals 18 and 20. A control signal is impressed directly to the gate of the one of the transistors 12 and impressed to the gate of the other transistor 10 via a negation device 16. The series source-drain circuits of three MOS electric field effect transistors 22, 24 and 26 are inserted between the input and output terminals. Then, the channel type of a central transistor 24 is made opposite to the other transistors 22 and 26, the gates of all the transistors of the other channel type are connected, and the threshold voltage of the transistors 22, 24 and 26 of a series circuit are made lower than that of the transistors 10 and 12.