POSITIVE TYPE PHOTORESIST COMPOSITION

PROBLEM TO BE SOLVED: To provide a positive type photoresist composition which ensures the improved edge roughness of a resist pattern in the production of a semiconductor device and is excellent in preservability and density dependency. SOLUTION: The positive type photoresist composition contains (...

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Bibliographic Details
Main Authors SATO KENICHIRO, MIZUTANI KAZUYOSHI
Format Patent
LanguageEnglish
Published 08.06.2001
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CINEMATOGRAPHY
COMPOSITIONS BASED THEREON
COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS
MATERIALS THEREFOR
METALLURGY
ORGANIC MACROMOLECULAR COMPOUNDS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
THEIR PREPARATION OR CHEMICAL WORKING-UP
USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS
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Summary:PROBLEM TO BE SOLVED: To provide a positive type photoresist composition which ensures the improved edge roughness of a resist pattern in the production of a semiconductor device and is excellent in preservability and density dependency. SOLUTION: The positive type photoresist composition contains (A) an acid generating compound represented by a specified structure, (B) an acid decomposable resin containing at least either specified silicon-containing repeating units or repeating units with a specified structure and having solubility to an alkali developing solution increased by the action of the acid, (C) a specified solvent, (D) an organic basic compound and (E) a surfactant with a specified structure.
Bibliography:Application Number: JP19990338487