METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, whereby if an antireflection film is removed by an etch back step, connection holes of adequate shapes can be formed by additionally forming a second antireflection film, to prevent the halation under question especia...

Full description

Saved in:
Bibliographic Details
Main Author MATSUMOTO KAZUHARU
Format Patent
LanguageEnglish
Published 25.05.2001
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, whereby if an antireflection film is removed by an etch back step, connection holes of adequate shapes can be formed by additionally forming a second antireflection film, to prevent the halation under question especially at wiring isolation regions before forming the connection holes. SOLUTION: A second antireflection film 11 is formed on a planarized layer insulation layer 7, a resist layer is formed on the second antireflection film 11, the exposure-development process is applied to the resist layer to form a second resist mask 8 having a desired opening pattern, and a laminate between the second resist mask 8 and a wiring layer 2 is etched to form connection holes 10a reaching the wiring layer 2, using the second resist mask 8 as a mask.
Bibliography:Application Number: JP19990325557