FILM DEPOSITION METHOD AND SYSTEM BY PULSE LASER

• Main Authors: NAGAI TORU, INOUE HISASHI, SHIMURA HIROFUMI
• Format: Patent
• Language: English
• Published: 17.04.2001
• Edition: 7
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a film deposition method by a pulse laser capable of depositing a thick film excellent in adhesion and denseness regardless of the shape of a substrate and the kind of the material to be melted and to provide a device therefor. SOLUTION: Pulse laser lights 21a and 22a for target irradiation having high power density with the pulse width of 0.1 to 20 msec are applied to a target 40, this is heated to produce and scatter molten grains 40a, and the molten grains 40a are deposited on a substrate 50, and, furthermore, a laser light 30a for substrate heating is applied to the deposition part of the molten grains 40a in the substrate 50 to heat the deposition part, by which a film having a film thickness of 100 μm to 1 mm is deposited on the substrate 50.