METHOD FOR FORMING A CONTACT-POINT OPENING IN DIELECTRICS LAYER OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method for manufacturing a self-alignment contact-point and to provide a method for manufacturing a semiconductor device using the self-alignment contact-point. SOLUTION: A step where a self-alignment contact-point (SAC) dielectrics layer is formed on a gate is pro...

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Bibliographic Details
Main Authors BIBEKKU SAKUSENA, SEUNGUMOO CHOI, PAI H II, AMAR MA HAMAD, FLEX REBADA
Format Patent
LanguageEnglish
Published 13.04.2001
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a method for manufacturing a self-alignment contact-point and to provide a method for manufacturing a semiconductor device using the self-alignment contact-point. SOLUTION: A step where a self-alignment contact-point (SAC) dielectrics layer is formed on a gate is provided. Further, a step is provided where the SAC dielectrics layer is formed of a such compound as, with a first element being group III or IV elements while a second element being group IV or V elements, the second element is not group V element when the first element is group IV element, and in the dielectrics layer and the SAC dielectrics layer, such opening as contacts the active region of the semiconductor device is formed.
Bibliography:Application Number: JP20000255260