METHOD FOR FORMING A CONTACT-POINT OPENING IN DIELECTRICS LAYER OF SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To provide a method for manufacturing a self-alignment contact-point and to provide a method for manufacturing a semiconductor device using the self-alignment contact-point. SOLUTION: A step where a self-alignment contact-point (SAC) dielectrics layer is formed on a gate is pro...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
13.04.2001
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide a method for manufacturing a self-alignment contact-point and to provide a method for manufacturing a semiconductor device using the self-alignment contact-point. SOLUTION: A step where a self-alignment contact-point (SAC) dielectrics layer is formed on a gate is provided. Further, a step is provided where the SAC dielectrics layer is formed of a such compound as, with a first element being group III or IV elements while a second element being group IV or V elements, the second element is not group V element when the first element is group IV element, and in the dielectrics layer and the SAC dielectrics layer, such opening as contacts the active region of the semiconductor device is formed. |
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Bibliography: | Application Number: JP20000255260 |