BIPOLAR DEVICE AND MANUFACTURING METHOD THEREFOR

• Main Authors: HAN TAE HYUN, RYUM BYUNG RYUL, LEE SOO MIN, CHO DEOK HO
• Format: Patent
• Language: English
• Published: 30.03.2001
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a bipolar transistor having an improved operating speed by forming a silicon(Si) or silicon-germanium(SiGe) base thin film by crystal thin film growth method, and not by ion implantation method, in a transistor as one type of a semiconductor device. SOLUTION: By using a silicon thin film 133 for the emitter and using silicon or silicon-germanium thin film 123b, having a smaller energy band gap than silicon for the base, a current gain and an operating speed of a transistor, that is, a cut-off frequency fT and a maximum oscillation frequency fmax can be increased. Or by increasing the doping concentration in the base of the transistor, intrinsic base resistance and parasitic base resistance can be reduced to further reduce a noise index. Using a self-alignment method, parasitic matching and a parasitic capacity are minimized, which is essential for increasing the operating speed of a device. At the same time, the process cost can be reduced by simplifying a manufacturing process and the suitability for mass- production is increased by improving reproducibility and reliability of the manufacturing process.