RAW MATERIAL FOR THIN FILM OF PEROVSKITE-TYPE COMPLEX OXIDE (SUCH AS A3+2B+B5+O6, A2+2B3+B5+O6 AND A2+3B2+B5+2O 9), AND METHOD FOR GROWING THE OXIDE

• Main Authors: MORISHITA TADATAKA, ZAMA HIDEAKI, TANABE KEIICHI
• Format: Patent
• Language: English
• Published: 21.03.2001
• Edition: 7
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; METALLURGY; ORGANIC CHEMISTRY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a raw material capable of strictly controlling the compositional ratio of perovskite-type complex oxide which is a complex compd. being a three-dimensional compd. SOLUTION: This BB'-double metal alkoxide (B=B+, B'=B5+; B=B3+, B'=B5+; B=B2+, B'B=B5+) raw material is used for organometallic vapor growth of a perovskite-type complex oxide thin film contg. plural metallic elements on the B site of perovskite structure ABO3, where BB'-double metal alkoxide is composed of BB'(O-X)6 [B=Li, Na, K; B'=Nb, Ta; X=CH3, C2H5, iC3H7, tC4H9] in the case of B=B+, B'=B5+, of BB'(O-X)8 [B=Al, Ga; B'=Nb, Ta; X=CH3, C2H5, iC3H7, tC4H9] in the case of B=B3+, B'=B5+, and of B[B'(O-X)6]2 [B=Mg, Ca, Sr, Ba; B'=Nb, Ta; X=CH3, C2H5, iC3H7, tC4H9].