SEMICONDUCTOR MANUFACTURING DEVICE AND MANUFACTURE OF SEMICONDUCTOR DEVICE

• Main Authors: UDO TSUTOMU, FUTASE TAKUYA
• Format: Patent
• Language: English
• Published: 16.03.2001
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To improve evenness in film thickness of a wafer surface without using a special wafer support jig. SOLUTION: The gas flow speed v(r) in Z-axis direction is increases by increasing a gas flow rate or reducing an interval a-b between a wafer 3 and an inner tube 2. The v(r) has a speed gradient in r-direction, causing a pressure difference in the r-direction based on Bernoulli's theorem. The pressure difference moves a reactive gas in the r-direction, causing a concentration gradient by -dC/dR in the r-direction. The reactive gas sticking to the peripheral part of the wafer 3 before deposition is moved in the r-direction to decrease the gas concentration at the peripheral part of decreasing deposition film thickness at the wafer's peripheral part and improving the evenness in film thickness. Related to the gas flow rate, a pressure difference ΔP in z-direction is 1Pa/mol or above, while 4Pa/mol or above is preferred. The interval a-b is 40 mm or less while 20 mm or less is preferred.