PATTERN-FORMING METHOD

PROBLEM TO BE SOLVED: To obtain a resist pattern having a satisfactory shape using exposure light having 140-160 nm for the wavelength. SOLUTION: A resist film 11, containing a base resin of the formula having >=40% transmittance to light having 140-160 nm wavelength in 200 nm thickness, is forme...

Full description

Saved in:
Bibliographic Details
Main Authors SASAKO MASARU, KISHIMURA SHINJI, KATSUYAMA AKIKO
Format Patent
LanguageEnglish
Published 16.03.2001
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CINEMATOGRAPHY
COMPOSITIONS BASED THEREON
COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS
MATERIALS THEREFOR
METALLURGY
ORGANIC MACROMOLECULAR COMPOUNDS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
THEIR PREPARATION OR CHEMICAL WORKING-UP
USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS
Online AccessGet full text

Cover

More Information
Summary:PROBLEM TO BE SOLVED: To obtain a resist pattern having a satisfactory shape using exposure light having 140-160 nm for the wavelength. SOLUTION: A resist film 11, containing a base resin of the formula having >=40% transmittance to light having 140-160 nm wavelength in 200 nm thickness, is formed on a semiconductor substrate 10, exposed in terms of a pattern using a F2 excimer laser 13 and developed with an alkaline developing solution to form a objective resist pattern 14 made of an unexposed part 11b of the resist film 11.
Bibliography:Application Number: JP20000135369