PATTERN-FORMING METHOD
PROBLEM TO BE SOLVED: To obtain a resist pattern having a satisfactory shape using exposure light having 140-160 nm for the wavelength. SOLUTION: A resist film 11, containing a base resin of the formula having >=40% transmittance to light having 140-160 nm wavelength in 200 nm thickness, is forme...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
16.03.2001
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To obtain a resist pattern having a satisfactory shape using exposure light having 140-160 nm for the wavelength. SOLUTION: A resist film 11, containing a base resin of the formula having >=40% transmittance to light having 140-160 nm wavelength in 200 nm thickness, is formed on a semiconductor substrate 10, exposed in terms of a pattern using a F2 excimer laser 13 and developed with an alkaline developing solution to form a objective resist pattern 14 made of an unexposed part 11b of the resist film 11. |
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Bibliography: | Application Number: JP20000135369 |