LAMINATED SUBSTRATE AND MANUFACTURE THEREOF

• Main Authors: TOMIZAWA KENJI, KOMATSU KEI, FUNADA TAKESHI, HAYAKAWA JUNICHI
• Format: Patent
• Language: English
• Published: 23.02.2001
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To allow as sharp and smooth carrier concentration profile with no drop in a transition region from an N+ silicon water to an N- silicon wafer. SOLUTION: An N- silicon wafer is laminated on the surface of an N+ silicon wafer. An even and high-resistance N- layer con be manufact...