LAMINATED SUBSTRATE AND MANUFACTURE THEREOF

PROBLEM TO BE SOLVED: To allow as sharp and smooth carrier concentration profile with no drop in a transition region from an N+ silicon water to an N- silicon wafer. SOLUTION: An N- silicon wafer is laminated on the surface of an N+ silicon wafer. An even and high-resistance N- layer con be manufact...

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Bibliographic Details
Main Authors TOMIZAWA KENJI, KOMATSU KEI, FUNADA TAKESHI, HAYAKAWA JUNICHI
Format Patent
LanguageEnglish
Published 23.02.2001
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To allow as sharp and smooth carrier concentration profile with no drop in a transition region from an N+ silicon water to an N- silicon wafer. SOLUTION: An N- silicon wafer is laminated on the surface of an N+ silicon wafer. An even and high-resistance N- layer con be manufactured easily on the active layer side of a laminated substrate at a low cost. Boron concentration on a lamination interface is get of 1×1013-5×1015 atoms/cm3, with Sb or As employed as a dopant for a high concentration. The carrier concentration profile in a transition region is sharp to dissolve drop. As a result, an N-/N+ type laminated substrate is manufactured with a high yield. So, a high-resistance wafer is provided as an alternate for an epitaxial wafer.
Bibliography:Application Number: JP19990229782