SEMICONDUCTOR LASER AND MANUFACTURE THEREOF

• Main Author: KIKAWA TAKESHI
• Format: Patent
• Language: English
• Published: 16.02.2001
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

PROBLEM TO BE SOLVED: To little increase operating current even after long-term operation and raise reliability with long lifetime by a method, wherein a hydrogenation amorphous silicon thin film has an Si-Hn bond and an Si-H bond among therein, and a specified amount of hydrogen atoms included in the hydrogenation amorphous silicon thin film forms the Si-H bond therein. SOLUTION: A low index of reflection (AR) film 20 is provided on a frontward emission face (Z=0) at one end of a resonator 40 of a semiconductor laser, and a high index of reflection (HR) 23 is provided on a rearward emission face (Z=L) at the other end. The high index of reflection (HR) 23 is structured to periodically laminate a silicon oxide (SiO2) film 21 and an a-Si:H film (amorphous film) 22. When the a-Si:H film 22 is manufactured, it is irradiated with hydrogen radicals or hydrogen ions, and in an Si-Hn (n>=2) bond and an Si-H bond in the amorphous film, the hydrogen atoms of 80% or higher contained in the amorphous film form the Si-H bond. The index of reflection of the high index of reflection 23 is 95%.