EXPOSING METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND ALIGNER

PROBLEM TO BE SOLVED: To improve the throughput of EUV exposure by using a non-toxic reflective mask by coating the reflective mirror with a multilayer film containing Be and exhibiting a high reflectance and coating the mask substrate with a multilayer film which does not contain Be and exhibits a...

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Bibliographic Details
Main Authors YAMANASHI HIROMASA, OGAWA TARO
Format Patent
LanguageEnglish
Published 19.01.2001
Edition7
Subjects
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Summary:PROBLEM TO BE SOLVED: To improve the throughput of EUV exposure by using a non-toxic reflective mask by coating the reflective mirror with a multilayer film containing Be and exhibiting a high reflectance and coating the mask substrate with a multilayer film which does not contain Be and exhibits a peak wavelength of the reflectance equal to that of the reflective mirror of the optical system. SOLUTION: One, a plural or all of reflective mirrors 4 of an optical system are coated with a multilayer film 5 containing Be and exhibiting a high reflecting, and a mask substrate 1 is coated with a multilayer film 2 which does not contain Be, exhibits a higher safety, and has a peak wavelength of the reflectivity determined in one sense by a period, a refractive index of the film and an incidence angle of the exposure light as equal to those of the reflective mirror of the optical system. With this optical system, the exposure light 11 is reflected by the reflective mask 1, 2 and 3, the concave mirrors 4 and 5, convex mirrors 6 and 7 and concave mirrors 8 and 9 in sequence and exposes the substrate 10 of member to be worked on.
Bibliography:Application Number: JP19990182816