RESIST COMPOSITION AND FINE PATTERN FORMING METHOD USING SAME

• Main Authors: MOON JU-TAE, KANG YOOL, SANG-JUN CHOI, CHUNG JEONG-HEE, WOO SANG-GYUN
• Format: Patent
• Language: English
• Published: 26.12.2000
• Edition: 7
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; COMPOSITIONS OF MACROMOLECULAR COMPOUNDS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; THEIR PREPARATION OR CHEMICAL WORKING-UP; USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS

PROBLEM TO BE SOLVED: To reduce the size of an opening formed in a photoresist pattern to the desired size only through one thermal flow step and to easily control the flow rate in the flow step while minimizing the deformation of the vertical profile of the photoresist pattern. SOLUTION: A resist solution used for forming a photoresist pattern by a photolithography process is mixed with a crosslinking agent capable of causing a partial crosslinking reaction of the resist solution by heat treatment at the glass transition temperature or softening start temperature of the resist solution or above to obtain the objective resist composition. The resist solution comprises a novolak resin and a DNQ compound.