MANUFACTURE OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR MANUFACTURING APPARATUS

• Main Authors: SAKAI MASANORI, NAKAMURE MICHIHIDE, KYODA MASAYUKI, ITAYA HIDEJI, MATSUYAMA NAOKO
• Format: Patent
• Language: English
• Published: 15.12.2000
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device, where a homogeneous deposition on a substrate becomes possible, and a semiconductor manufacturing apparatus for it. SOLUTION: This manufacturing method comprises a substrate carrying-in process for carrying the substrate into a reaction tube 51, a substrate heating process for heating the substrate within the reaction tube 51, a board deposition process for depositing a film on the surface of the substrate, and a substrate carrying-out process for carrying out the substrate after deposition from the reaction tube 51, and the reaction tube 51 is equipped with gas supply ports 52 and 53 and exhaust ports 54 and 55, and in the board heating process, a prescribed gas is exhausted from all exhaust ports 54 and 55 while supplying it with a given gas from the gas supply ports 52 and 53. Moreover, this manufacture includes a process of exhausting the given gas from all the exhaust ports 54 and 55 and removing the residual gas within the reaction tube 51, while supplying it with the given gas from the gas supply ports 52 and 53 after deposition on the substrate.