PATTERN FORMING METHOD

PROBLEM TO BE SOLVED: To obtain a good pattern shape when a resist pattern is formed using light having a wavelength in the range of 1-180 nm as light for exposure. SOLUTION: A resist material with a base resin having sulfonyl groups in the principal chain is applied on a semiconductor substrate 10...

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Bibliographic Details
Main Authors SASAKO MASARU, KISHIMURA SHINJI, KATSUYAMA AKIKO
Format Patent
LanguageEnglish
Published 30.11.2000
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To obtain a good pattern shape when a resist pattern is formed using light having a wavelength in the range of 1-180 nm as light for exposure. SOLUTION: A resist material with a base resin having sulfonyl groups in the principal chain is applied on a semiconductor substrate 10 to form a resist film 11. This resist film 11 is patternwise exposed by irradiation with F2 excimer laser light 13 having 157 nm wavelength through a mask 12 and the patternwise exposed resist film 11 is developed with a developing solution to form the objective resist pattern 14.
Bibliography:Application Number: JP20000036173