PATTERN FORMING METHOD
PROBLEM TO BE SOLVED: To obtain a good pattern shape when a resist pattern is formed using light having a wavelength in the range of 1-180 nm as light for exposure. SOLUTION: A resist material with a base resin having sulfonyl groups in the principal chain is applied on a semiconductor substrate 10...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
30.11.2000
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To obtain a good pattern shape when a resist pattern is formed using light having a wavelength in the range of 1-180 nm as light for exposure. SOLUTION: A resist material with a base resin having sulfonyl groups in the principal chain is applied on a semiconductor substrate 10 to form a resist film 11. This resist film 11 is patternwise exposed by irradiation with F2 excimer laser light 13 having 157 nm wavelength through a mask 12 and the patternwise exposed resist film 11 is developed with a developing solution to form the objective resist pattern 14. |
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Bibliography: | Application Number: JP20000036173 |