THERMOELECTRIC SEMICONDUCTOR ELEMENT AND MANUFACTURE THEREOF

• Main Authors: YOSHIOKA TOYOKICHI, TOKUNAGA SHINJI
• Format: Patent
• Language: English
• Published: 24.11.2000
• Edition: 7
• Subjects: ELECTRICITY

PROBLEM TO BE SOLVED: To manufacture an inexpensive thermoelectric semiconductor element in which strength can be increased without sacrifice of thermoelectric characteristics by cutting a thermoelectric semiconductor ingot while heating and pressing from a direction perpendicular to the cleaving direction. SOLUTION: An ingot 42 or a mass 32 placed in a die 51 is hot pressed to produce a pressed work 22 where flaky particles 2a are bonded firmly while being arranged in one direction. The pressed work 22 is then sliced in the direction perpendicular to the cleaving direction 20, as shown by a double dots and dash line, to form a thermoelectric semiconductor wafer 12 from which a thermoelectric semiconductor 2 is formed by means of a dicing apparatus. A thermoelectric semiconductor element excellent in strength can be manufactured by hot pressing an ingot 42 or a mass 32 of thermoelectric semiconductor wherein thermoelectric characteristics are not deteriorated because the flaky particles 2a forming the thermoelectric semiconductor 2 are arranged in one direction without being altered from the state of the ingot 42.