PATTERN FORMING METHOD

• Main Authors: SASAKO MASARU, KATSUYAMA AKIKO, KISHIMURA SHINJI
• Format: Patent
• Language: English
• Published: 24.11.2000
• Edition: 7
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a pattern forming method capable of forming a good pattern in the case of forming a resist pattern by imagewise exposing a resist material to a 1-180 nm band light. SOLUTION: This resist material containing at least one atom or a group selected from a halogen atom and cyano, mitro, alkoxy, amino, alkyl, trifluoromethyl, and mercapto groups is applied to a semiconductor substrate 10 to form a resist film 11, and irradiated with F2 laser beams having 157 nm band through a mask 12 and developed to form a resist pattern 14.