PATTERN FORMING METHOD
PROBLEM TO BE SOLVED: To provide a pattern forming method capable of forming a good pattern in the case of forming a resist pattern by imagewise exposing a resist material to a 1-180 nm band light. SOLUTION: This resist material containing at least one atom or a group selected from a halogen atom an...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
24.11.2000
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide a pattern forming method capable of forming a good pattern in the case of forming a resist pattern by imagewise exposing a resist material to a 1-180 nm band light. SOLUTION: This resist material containing at least one atom or a group selected from a halogen atom and cyano, mitro, alkoxy, amino, alkyl, trifluoromethyl, and mercapto groups is applied to a semiconductor substrate 10 to form a resist film 11, and irradiated with F2 laser beams having 157 nm band through a mask 12 and developed to form a resist pattern 14. |
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Bibliography: | Application Number: JP20000040647 |