PATTERN FORMING METHOD

PROBLEM TO BE SOLVED: To provide a pattern forming method capable of forming a good pattern in the case of forming a resist pattern by imagewise exposing a resist material to a 1-180 nm band light. SOLUTION: This resist material containing at least one atom or a group selected from a halogen atom an...

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Bibliographic Details
Main Authors SASAKO MASARU, KATSUYAMA AKIKO, KISHIMURA SHINJI
Format Patent
LanguageEnglish
Published 24.11.2000
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a pattern forming method capable of forming a good pattern in the case of forming a resist pattern by imagewise exposing a resist material to a 1-180 nm band light. SOLUTION: This resist material containing at least one atom or a group selected from a halogen atom and cyano, mitro, alkoxy, amino, alkyl, trifluoromethyl, and mercapto groups is applied to a semiconductor substrate 10 to form a resist film 11, and irradiated with F2 laser beams having 157 nm band through a mask 12 and developed to form a resist pattern 14.
Bibliography:Application Number: JP20000040647