THREE-DIMENSIONAL MONOLITHIC MICROWAVE INTEGRATED CIRCUIT

PROBLEM TO BE SOLVED: To provide a three-dimensional monolithic microwave integrated circuit (3-D MMIC) which can provide great heat radiation and thus can operate with a large power. SOLUTION: A circuit 23 is a 3-D MMIC which includes a substrate partition 22 made of semiconductor material and havi...

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Bibliographic Details
Main Authors JEFFREY H ELLIOT, JAMES C-K RAU, KEI-FAN RAU
Format Patent
LanguageEnglish
Published 14.11.2000
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a three-dimensional monolithic microwave integrated circuit (3-D MMIC) which can provide great heat radiation and thus can operate with a large power. SOLUTION: A circuit 23 is a 3-D MMIC which includes a substrate partition 22 made of semiconductor material and having a thickness of about 0.03 mil to about 1 mil, an integrated circuit formed on a first surface of the substrate partition 22 and insulated by a film 14, and a structure layer 24 for covering a second surface of the substrate partition 22 opposite to the first surface. The substrate partition 22 can have substantially the same region as an active region 18 of the MMIC, the insulating film can be extended beyond the substrate partition 22, and the structure layer 24 can have substantially the same spread as the insulating film.
Bibliography:Application Number: JP20000113044