FORMATION OF AMORPHOUS SILICON SERIES FILM HAVING CONTROLLED ELECTRICAL CONDUCTIVITY

• Main Authors: REGINA KIU, GUOFU J FEN, ROBERT MCCORMICK ROBERTSON, JEFF C OLSEN, YVONNE REGURAISU, LAW KAM S, WILLIAM R HIRSCHBERGER, TAKEHARA TAKAKO
• Format: Patent
• Language: English
• Published: 24.10.2000
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a forming method preparing an amorphous silicon series film having controlled electrical conductivity and low stress. SOLUTION: This film can be used as an intermediate layer in FED production. The film also may be used for the other electronic apparatus requiring a film having resistivity controlled to the intermediate range between the resistivity of an insulator and the resistivity of a conductor. As the forming method, chemical vapor deposition or plasma chemical vapor deposition is used. Furthermore, other techniques such as physical deposition may be used as well. In one executing form, by introducing a silicon series volatile material, a conductivity increasing volatile material contg. one or more components for increasing the electrical conductivity of the amorphous silicon series film and a conductivity reducing volatile material contg. one or more components for reducing the electrical conductivity of the amorphous silicon series film into a deposition chamber, the amorphous silicon series film is formed.