SEMICONDUCTOR STORAGE AND ITS MANUFACTURE

PROBLEM TO BE SOLVED: To surely ensure a specified capacity of a semiconductor storage having floating gates, while miniaturizing the same to 0.35 μm or less. SOLUTION: Floating gate electrodes 16 formed of n-type polysilicon are formed respectively between side wall films 13 on device separating fi...

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Bibliographic Details
Main Author MINAMI RIE
Format Patent
LanguageEnglish
Published 20.10.2000
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To surely ensure a specified capacity of a semiconductor storage having floating gates, while miniaturizing the same to 0.35 μm or less. SOLUTION: Floating gate electrodes 16 formed of n-type polysilicon are formed respectively between side wall films 13 on device separating films 12 on a substrate 11 of p-type silicon and on first-layer gate oxide films 15. Second layer gate oxide films 17 of silicon oxide, control gate electrodes 18 formed of n-type polysilicon and upper protective insulating films 19 are formed in sequence respectively on the floating gate electrodes 16 and above the first layer gate oxide films 15. Border extending insulating films 20 formed of silicon oxide whose inner surface is connected to the sides of the upper protective insulating films 19 are formed on the border of the control gate electrodes 18.
Bibliography:Application Number: JP19990099590