MANUFACTURE OF THIN-FILM ELEMENT
PROBLEM TO BE SOLVED: To form a polysilicon layer of a large crystal particle size in a channel region, related to a thin-film element used as a switching element of an active matrix liquid-crystal display. SOLUTION: An amorphous silicon film 2 is formed on a glass substrate 1, on which a glass film...
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Main Author | |
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Format | Patent |
Language | English |
Published |
06.10.2000
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Abstract | PROBLEM TO BE SOLVED: To form a polysilicon layer of a large crystal particle size in a channel region, related to a thin-film element used as a switching element of an active matrix liquid-crystal display. SOLUTION: An amorphous silicon film 2 is formed on a glass substrate 1, on which a glass film 3 is formed. A modulation region 4 is so formed that the optical property of the glass film 3 at least changes in the direction parallel to the surface of the glass substrate 1. A laser beam 5 is made incident on the glass film 3, whose intensity distribution is modulated with the glass film 3 and made incident on the amorphous silicon film 2, so that the amorphous silicon film is poly-crystallized. |
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AbstractList | PROBLEM TO BE SOLVED: To form a polysilicon layer of a large crystal particle size in a channel region, related to a thin-film element used as a switching element of an active matrix liquid-crystal display. SOLUTION: An amorphous silicon film 2 is formed on a glass substrate 1, on which a glass film 3 is formed. A modulation region 4 is so formed that the optical property of the glass film 3 at least changes in the direction parallel to the surface of the glass substrate 1. A laser beam 5 is made incident on the glass film 3, whose intensity distribution is modulated with the glass film 3 and made incident on the amorphous silicon film 2, so that the amorphous silicon film is poly-crystallized. |
Author | TAKIZAWA YUTAKA |
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Snippet | PROBLEM TO BE SOLVED: To form a polysilicon layer of a large crystal particle size in a channel region, related to a thin-film element used as a switching... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
Title | MANUFACTURE OF THIN-FILM ELEMENT |
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