MANUFACTURE OF THIN-FILM ELEMENT

PROBLEM TO BE SOLVED: To form a polysilicon layer of a large crystal particle size in a channel region, related to a thin-film element used as a switching element of an active matrix liquid-crystal display. SOLUTION: An amorphous silicon film 2 is formed on a glass substrate 1, on which a glass film...

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Bibliographic Details
Main Author TAKIZAWA YUTAKA
Format Patent
LanguageEnglish
Published 06.10.2000
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FREQUENCY-CHANGING
NON-LINEAR OPTICS
OPTICAL ANALOGUE/DIGITAL CONVERTERS
OPTICAL LOGIC ELEMENTS
OPTICS
PHYSICS
SEMICONDUCTOR DEVICES
TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Summary:PROBLEM TO BE SOLVED: To form a polysilicon layer of a large crystal particle size in a channel region, related to a thin-film element used as a switching element of an active matrix liquid-crystal display. SOLUTION: An amorphous silicon film 2 is formed on a glass substrate 1, on which a glass film 3 is formed. A modulation region 4 is so formed that the optical property of the glass film 3 at least changes in the direction parallel to the surface of the glass substrate 1. A laser beam 5 is made incident on the glass film 3, whose intensity distribution is modulated with the glass film 3 and made incident on the amorphous silicon film 2, so that the amorphous silicon film is poly-crystallized.
Bibliography:Application Number: JP19990076899